%0 Journal Article
%T Thin-Film Accumulation-Mode SOI pMOSFET
%A Abstract
%A <br>Lian Jun
%A Hai Chaohe
%A and Cheng Chao
%J 半导体学报
%D 2005
%I 
%X Thin-film accumulation-mode SOI pMOSFETs are fabricated and investigated.Their characteristics are compared with those of thin-film inversion-mode pMOSFETs.The subthreshold slope is 69mV/decade,and it almost has no DIBL effect.The breakdown voltage is 10.5V,which is increased by 40% relative to thin-film inversion-mode pMOSFET.The saturation current is 130μA/μm,which is enhanced by 27% compared with inversion-mode pMOSFET.The per-stage propagation delay of 101-stage SOI CMOS ring oscillator is 56ps with 3V supply voltage.
%K pMOS
%K accumulation-mode
%K SOI
%K pMOS<br>积累型
%K 绝缘体上硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2D65E5708C6ED9D3&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=771469D9D58C34FF&eid=27746BCEEE58E9DC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15