%0 Journal Article
%T 800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser<br>用800nm表面态方法和低温方法结合吸收区的半导体可饱和吸收镜实现掺钛蓝宝石激光克尔镜锁模(英文)
%A Wang Yonggang
%A Ma Xiaoyu
%A Cao Shiying
%A Zhang Zhigang
%A <br>王勇刚
%A 马骁宇
%A 曹士英
%A 张志刚
%J 半导体学报
%D 2004
%I 
%X 研制了一种新型的80 0 nm布拉格反射镜型半导体可饱和吸收镜,其吸收区是低温方法和表面态方法相结合.用该吸收体实现了氩离子激光器泵浦的掺钛蓝宝石激光器被动锁模,脉冲宽度达到4 0 fs,光谱带宽为5 6 nm,后者意味着它可以支持2 0 fs的锁模.脉冲序列的重复率为97.5 MHz,泵浦源为4 .4 5 W下平均输出功率为30 0 m W.
%K semiconductor saturable absorption mirror
%K sur face states
%K low temperature
%K Bragg mirror<br>半导体可饱和吸收镜
%K 表面态
%K 低温
%K 布拉格镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=753973A87F866679&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=603BC00D7DC5FEAC&eid=72EB001A9B3C78CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10