%0 Journal Article
%T Design Guideline of Ultra Thin Body MOSFET<br>超薄体MOSFET的结构优化(英文)
%A Wang Wenping
%A Huang Ru
%A Zhang Guoyan
%A <br>王文平
%A 黄如
%A 张国艳
%J 半导体学报
%D 2004
%I 
%X Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.
%K ultra thin body MOSFET
%K raised S/D height
%K Ge mole fraction
%K silicon body thicknessEEACC:4250
%K 128 0<br>超薄体MOSFET
%K 提升源漏高度
%K Ge摩尔百分比
%K 硅膜厚度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1284A464253B3FE4&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=8EC0A96FD5EC3019&eid=880C4253794026AD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8