%0 Journal Article
%T MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States<br>基于有效态密度的MOS结构电荷控制模型
%A MA Yu
%A |tao
%A LIU Li
%A |tian
%A LI Zhi
%A |jian
%A <br>马玉涛
%A 刘理天
%A 李志坚
%J 半导体学报
%D 2000
%I 
%X Based on the analysis of the distribution of inversion layer carrier in the space charge region of MOS structure, the concept of Surface Layer Effective Density\|of\|States (SLEDOS) is proposed. Then a new charge control model is established in which the effects of inversion layer carrier distribution on surface potential are included. In this model, the effect of surface potential change after strong inversion on carrier sheet density is included and a new efficient iterative method is adopted. The model is with high efficiency and accuracy.
%K MOS structure
%K charge control model
%K effective density\|of\|states
%K inversion layer charge<br>金属-氧化层-半导体结构
%K 电荷控制模型
%K 有效态密度
%K 反型层电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FB4C1F2E3F130830&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=E158A972A605785F&sid=F4BDB5452F9F5642&eid=389106FB36CA8332&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6