%0 Journal Article
%T AlInGaAs/AlGaAs Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy
%A 杨国文
%A 徐遵图
%A 徐俊英
%A 张敬明
%A 肖建伟
%A 陈良蕙
%J 半导体学报
%D 1997
%I 
%X Strained InGaAs/AIGaAs quantum well lasers have demonstrated improved performance compared with lattice--matched,unstrained GaAs/AIGaAsorAIGaAs/AIGaAs quantum well lasers,which has been attributed to modifications of the band tructure due to the strained natur...
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D60BE8BF6BB6F206&yid=5370399DC954B911&vid=13553B2D12F347E8&iid=E158A972A605785F&sid=C2F76551C0111538&eid=EC34D52BE81085CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0