%0 Journal Article
%T Total DoseEffects of Protons on MOS Devices<br>MOS器件的质子总剂量效应
%A WANG Gui zhen
%A ZHANG Zheng xuan
%A JIANG Jing he
%A LUO Yin hong
%A PENG Hong lun
%A HE Bao ping
%A <br>王桂珍
%A 张正选
%A 姜景和
%A 罗尹红
%A 彭宏论
%A 何宝平
%J 半导体学报
%D 2001
%I 
%X The total dose effects of protons on the soft oxide MOS devices and rad hard MOS devices are tested.Irradiated with 2,5,7 and 9MeV protons,the damage has been measured,respectively.It is indicated that the radiation damage of MOS devices,whether soft or rad hard,varies with the energy of protons,i.e.,higher energy protons will cause more damage.The radiation effects are different to MOS devices under the bias condition and under the zero gate bias condition.For hard oxide N channel transistor,the damage is more serious and the density of the interface traps bias condition is higher than that under zero bias condition,while for hard oxide P channel,the density under zero gate bias condition is higher than that under bias condilion.
%K total dose effects
%K proton
%K Faraday cup
%K threshold voltage
%K leakage current<br>总剂量效应
%K 质子
%K Faraday筒
%K 阈值电压
%K 漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4198C6093C92FE68&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=AA9D0A3238B80655&eid=B2A9EA001599F2ED&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3