%0 Journal Article
%T Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors<br>Wet Oxidation of AlxGa1－xAs/GaAs Distributed Bragg Reflectors
%A Li RuoYuan
%A Wang ZhanGuo
%A Xu Bo
%A Jin Peng
%A Zhang ChunLing
%A Guo Xia
%A Chen Min
%A <br>Li Ruoyuan
%A Wang Zhanguo
%A Xu Bo
%A Jin Peng
%A Zhang Chunling
%A Guo Xi
%A and Chen Min
%J 半导体学报
%D 2005
%I 
%X The wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors (DBR) is studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM).Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers.These voids decrease the shrinkage of the Al_2O_3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers.With the extension of oxidation time,the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces.As a result,the oxide quality is better.
%K wet oxidation
%K vertical cavity surface emitting laser
%K distributed Bragg reflectors
%K Al_2O_3
%K interface<br>wet
%K oxidation
%K vertical
%K cavity
%K surface
%K emitting
%K laser
%K distributed
%K Bragg
%K reflectors
%K Al2O3
%K interface
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0FE0EB0AA4B09462&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=5D311CA918CA9A03&sid=DEEC1AC3B6D3EB96&eid=777A6C995272142B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=10