%0 Journal Article
%T Effects of Non-abrupt Interface on Waveguide Properties of SiGe/Si MQW Photodetector
%A 朱育清
%A 杨沁清
%A 王启明
%J 半导体学报
%D 1997
%I 
%X With the development of MBE and MOCVD techniques,the MQW waveguide has become an important structure in some optoelectronic devices1~3].SiGe/SiMQW waveguide photodetectors have been demonstrated.By using the SiGe/Si MQW structures as natural waveguides,a high quantum efficie...
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=163EAF0B834FC3AF&yid=5370399DC954B911&vid=13553B2D12F347E8&iid=38B194292C032A66&sid=FE4C96E058BB2280&eid=C812B90E96151014&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0