%0 Journal Article
%T Strained Si-Channel Heterojunction n-MOSFET<br>应变Si沟道异质结NMOS晶体管(英文)
%A Shi Jin
%A HUANG Wentao
%A CHEN Peiyi
%A <br>史进
%A 黄文涛
%A 陈培毅
%J 半导体学报
%D 2002
%I 
%X The process parameters are adjusted and the process procedure is simplified on the basis of precursor's work and the strained Si channel SiGe n MOSFET is fabricated successfully.This n MOSFET takes the strained Si layer(which is deposited on the relaxed SiGe buffer layer) as current channel and can provide a 48 5% improvement in electron mobility while keeping the gate voltage as 1V.
%K strain
%K SiGe
%K transconductance
%K mobility<br>应变
%K SiGe
%K 跨导
%K 迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=41960FD29F0C6D41&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=DF92D298D3FF1E6E&sid=AF14A8B15FB15A64&eid=128B7AEF80A42C95&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=8