%0 Journal Article
%T Photoluminescence Study of ZnSe_(1-x)S_x-ZnSe Strained-Layer Superlattice<br>ZnSe_(1-x)S_x-ZnSe应变超晶格结构光致发光研究
%A Guan Zhengping/Changchun Institute of Physics
%A Academia SinicaFan Guanghan/Changchun Institute of Physics
%A Academia SinicaSong Shihui/Changchun Institute of Physics
%A Academia SinicaFan Xiwu/Changchun Institute of Physics
%A Academia Sinica
%A <br>关郑平
%A 范广涵
%A 宋世惠
%A 范希武
%J 半导体学报
%D 1991
%I 
%X Photoluminescence (PL) technique is used to diagnose the quality of ZnSe_(1-x)S_x-ZnSeSLS. The influence of excitation defnsity,fluctuations of well thickness and barrier heighton the fluorescence spectra of SLS are discussed. The relation of the fluctuations of well thi-ckness and barrier height to the broadening of n=1 exciton energies are calculated usingKronig-Penney model. We have analysed for the first time the relation of exciton lineshapeto each growth parameter in the temperature range from 77 K to 250 K for ZnSe_(1-x)S_x-Zu-Se SLS.
%K ZnSe_(1-x)S_x/ZnSe superlattice
%K Exciton lineshape
%K Photoluminescence<br>ZnSeS／ZnSe
%K 超晶格
%K 结构
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9687A7AB570B1212670A61E2D31FAA6E&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=38B194292C032A66&sid=31611641D4BB139F&eid=73579BC9CFB2D787&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=5