%0 Journal Article
%T Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOSStructures Under Constant Pressure Stress<br>超薄栅MOS结构恒压应力下的直接隧穿弛豫谱
%A 卫建林
%A 毛凌锋
%A 许铭真
%A 谭长华
%J 半导体学报
%D 2001
%I 
%X With the rapid scaling down of MOS devices,the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.Based on the method of proportional difference operator and relaxation spectroscopy technique,a new relaxation spectroscopy technique,Direct Tunneling Relaxation Spectroscopy (DTRS) is presented for the ultrathin gate oxide MOS structure under the direct tunneling stress,which has the same advantages of OCRS technique,direct,fast and convenient.It can separate and characterize different traps in an ultra-thin direct tunneling gate oxide,and extract the parameters of an oxide trap,such as the generation/capture cross section and density.It is a useful tool to study the mechanism of degradation in the ultra-thin MOSFET under direct tunneling stress.
%K direct tunneling
%K ultrathin gate oxide
%K trap parameters
%K reliability<br>直接隧穿
%K 超薄栅氧化层
%K 陷阱参数
%K 可靠性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=760093ABA9F69110&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=B31275AF3241DB2D&sid=849F08713EB6820A&eid=CA122BD5B2FF2137&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=22