%0 Journal Article
%T Photo-EPR-Study of Cr~(4+)(3d~2) State in GaAs:Cr<br>GaAs:Cr中的Cr~(4+)(3d~2)态的光激发电子顺磁共振研究
%A Mao Jinchang/
%A <br>毛晋昌
%A 傅济时
%A 吴恩
%A 秦国刚
%A 王永鸿
%A 马碧春
%J 半导体学报
%D 1991
%I 
%X The photo-EPR Study of Cr~(4+) in Semi-insulated GaAs:Cr is reported.Theexperimental results show that there is a maximum of the Cr~(4+) EPR signal amplirude as a function of temperature in the temperature range 20-30K.It is disco-vered for the first time that after turning off the white light the Cr~(4+) EPR signalincreased before coming to decay.The neutron irradiation can restrain the Cr~(4+)EPR signal, but almost has no influence on the Cr~(2+) signal.
%K Deep levels in semiconductors
%K Chromium in gallium arsenide
%K Electron paramagnetic resonance<br>砷化镓
%K 深能级
%K 电子
%K 顺磁共振
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9687A7AB570B1212DAF4AC4FE36A9207&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=F122871CC7EC92DC&eid=1F199509C0B6C4D6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0