%0 Journal Article
%T Substrate Current Characteristics After Soft Breakdown in Ultra-Thin Gate Oxide nMOSFETs Under Constant Voltage Stress<br>恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性
%A WANG Yangang
%A Xu Mingzhen
%A Tan Changhua
%A Duan Xiaorong
%A <br>王彦刚
%A 许铭真
%A 谭长华
%A 段小蓉
%J 半导体学报
%D 2005
%I 
%X 研究了在恒压应力下超薄栅nMOSFET软击穿后的衬底电流特性．软击穿时间由衬底电流随时间的弛豫特性和器件输出特性测量时监测的衬底电流突变确定．发现软击穿时间的威布尔斜率和衬底特征击穿电流随温度的升高而增大．用类渗流模型模拟了软击穿后衬底电流与栅电压的关系．利用变频光泵效应讨论了超薄栅MOSFET低电压应力下衬底电流的来源，并解释了软击穿后衬底电流和栅电流之间的线性关系．
%K substrate current
%K soft breakdown
%K ultra-thin gate oxide
%K Weibull distribution
%K variable frequency light pumping<br>衬底电流
%K 软击穿
%K 超薄栅氧化层
%K 威布尔分布
%K 变频光泵效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A4A20866B344BF65&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=E6D5A068841F33F3&eid=F0CB1CC137DFCF2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14