%0 Journal Article
%T Intermixing of Asymmetrical Coupling Double Quantum Well via Combinatorial Ion Implantation with Photo-Modulated Reflectance Spectrum<br>组合离子注入导致非对称耦合双量子阱界面混合效应光调制反射光谱
%A 缪中林
%A 陆卫
%A 陈平平
%A 李志锋
%A 刘平
%A 袁先漳
%A 蔡炜颖
%A 徐文兰
%A 沈学础
%A 陈昌明
%A 朱德彰
%A 胡军
%A 李明乾
%J 半导体学报
%D 2001
%I 
%X GaAs/AlGaAs asymmetrical coupling double quantum well (ACDQW) has been grown with molecule beam epitaxy (MBE).With combinatorial implantation methods,several areas with different implantation ion of As + and H + and different ion doses have been obtained on only a single substrate.Without rapid thermal annealing procedure,the maximum difference of transition energy in sub-bands is found to be 50meV from the photo-modulated reflectance spectra.
%K asymmetrical coupling double quantum well (ACDQW)
%K combinatorial implantation
%K photo-modulated reflectance spectrum
%K intermixing<br>非对称耦合双量子阱(ACDQW)
%K 组合注入
%K 光调制反射光谱(PR)
%K 界面混合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1237E760F95366F1&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=B31275AF3241DB2D&sid=569BDAA4FEA0F7F9&eid=00B9006659EBD8AC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3