%0 Journal Article
%T Band-Inhomogeneity in GaAs Single Crystal Grown in Space
%A 周伯俊
%J 半导体学报
%D 1995
%I 
%X A band type inhomogeneity with 1.2-2.0 mm width in GaAs single crystal grown in space was revealed by using electrical plate technique. The striations have not been found in this area by anodic etching.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CA9FFBEFF36300CA&yid=BBCD5003575B2B5F&vid=7801E6FC5AE9020C&iid=0B39A22176CE99FB&sid=4C100B7696CE9E24&eid=1B97AE5098AEB49C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0