%0 Journal Article
%T Orientation Effects on InGaP/GaAs HBT<br>晶向对InGaP/GaAs HBT性能的影响
%A Shi Ruiying
%A Liu Xunchun
%A Sun Haifeng
%A Yuan Zhipeng
%A <br>石瑞英
%A 刘训春
%A 孙海峰
%A 袁志鹏
%J 半导体学报
%D 2004
%I 
%X Orientation effect on self-aligned InGaP/GaAs HBT is described.The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .But it shows slightly better RF performance for orientation with .f. t 69GHz compared to .f. t of 62GHz for the orientation.In previous paper,the DC current gain difference of between the two orientation transistors is attributed to the piezoelectric effect,but the difference of .f. t is not explained.It is proposed that the dependence of the characteristics is attributed to both piezoelectric effect and the difference between etched pattern in different directions.
%K InGaP/GaAs HBT orientation effect
%K DC current gain
%K piezoelectric effect
%K cut-off frequency
%K etched pattern<br>InGaP/GaAsHBT晶向效应
%K 直流电流增益
%K 截止频率
%K 压电效应
%K 侧向腐蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B197324B503FB2A0&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=E158A972A605785F&sid=BD7D27247C63490C&eid=78BF76CF5B7CB0F2&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8