%0 Journal Article
%T A New Lifetime Prediction Model for pMOSFETs Under Vg=Vd/2 Mode with 2.5nm Oxide<br>在V_g=V_d/2应力模式下2 5nm氧化层pMOSFETs的新寿命预测模型(英文)
%A Hu Jing
%A Zhao Yao
%A Xu Mingzhen
%A Tan Changhua
%A <br>胡靖
%A 赵要
%A 许铭真
%A 谭长华
%J 半导体学报
%D 2004
%I 
%X Gate current for pMOSFETs is composed of direct tunneling current,channel hot hole,electron injection current,and highly energetic hot holes by secondary impact ionization.The device degradation under V g=V d/2 is mainly caused by the injection of hot electrons by primary impact ionization and hot holes by secondary impact ionization,and the device lifetime is assumed to be inversely proportional to the hot holes,which is able to surmount Si-SiO 2 barrier and be injected into the gate oxide.A new lifetime prediction model is proposed on the basis and validated to agree well with the experiment.
%K hot carriers
%K recombination
%K electron injection
%K secondary impact ionization<br>热载流子
%K 复合
%K 电子注入
%K 二次碰撞电离
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=764AC364845CC3D4&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=04445C1D2BDA24EE&eid=0B4F496D54044D86&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14