%0 Journal Article
%T Photoluminescence of Defects in LEC GaAs<br>LEC GaAs中缺陷的光致发光研究
%A Chen Tingjie/Institute of Semiconductors
%A Academia SinicaWu Lingxi/Institute of Semiconductors
%A Academia SinicaWang Zhanguo/Institute of Semiconductors
%A Academia SinicaHe Hongjia/Institute of Semiconductors
%A Academia SinicaLin Lanying/Institute of Semiconductors
%A Academia Sinica
%A <br>陈廷杰
%A 吴灵犀
%A 王占国
%A 何宏家
%A 林兰英
%J 半导体学报
%D 1989
%I 
%X 本文用4.2K光致发光研究了LEC GaAs的热感生缺陷.热退火时样品分别为无包封,包封或用一个未掺杂的SI-GaAs片覆盖.退火温度为650-850℃,退火在不同气氛下进行(真空,H_2,N_2,H_2+N_2或H_2+As_2). 与缺陷有关的发光带有1.443eV,1.409ev和0.67eV发光带.1.443eV发光带不仅在富Ga的GaAs中出现,而且在富As的热稳定性好的SI-GaAs晶体并经过850℃(在H_2中)热退火的样品中也观测到此发光带.这可能是在退火过程中促进反位缺陷GaAs的形成.1.443eV发光带与GaAs有关.GaAs晶体在H_2中退火后1.409eV峰很强,但在真空中退火末探测到此发光带.文中提出它可能是热退火时氢原子扩散到GaAs晶体中并与某些缺陷结合成络合物的新观点.
%K GaAs
%K Defect
%K Photoluminescence<br>GaAs
%K 缺陷
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7C8C29AD44EEED5F&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=59906B3B2830C2C5&sid=3D9E2C3DB640307A&eid=3019419AF3C0F2FB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2