%0 Journal Article
%T Study on IR SPV Spectram of the SnO_2 Films<br>SnO_2薄膜的红外光谱和表面光电压谱的研究
%A Dai Guorui/Jilin University
%A ChangchunJiang Yueshun/Jilin University
%A ChangchunWang Yajing/Jilin University
%A ChangchunDong Xijuan/Jilin University
%A ChangchunTang Daxin/Jilin University
%A ChangchunLi Tiejin/Jilin University
%A Changchun
%A <br>戴国瑞
%A 姜月顺
%A 王雅静
%A 董玺娟
%A 汤大新
%A 李铁津
%J 半导体学报
%D 1989
%I 
%X 本文采用PECVD方法制备了SnO_2薄膜,对薄膜进行了红外光谱和表面光电压谱测量发现,薄膜表面化学吸附O_2~(2-)和O~-离子基团,成为反应活性中心、电子转移的桥梁,推测了SnO_2表面与乙醇气体敏感反应历程.SnO_(?)薄膜淀积在n-Si上,使其表面光电压信号增强二个数量级以上,我们认为是SnO_2/n-Si异质结作用和消反射作用的结果.
%K SnO_2 films
%K Infrared spectroscopy
%K Sensing mechanism
%K Surface photovoltaic spectroscopy<br>SnO2
%K 薄膜
%K 红外光谱
%K 表面光电压谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307CCB6431F5BA10588&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=708DD6B15D2464E8&sid=1F8584045E0BED57&eid=A766A50385B9FB1F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=1