%0 Journal Article
%T Study on Nitridation of Thin Gate SiO_2 Using Nitrogen Ion Implantation<br>离子注入氮化薄SiO_2栅介质的特性
%A 王延峰
%A 刘忠立
%J 半导体学报
%D 2001
%I 
%X The nitridation technique of the thin gate SiO 2 is reported by using the nitrogen ion implantation through the poly silicon gate.It shows that the thin gate SiO 2 after nitridation can effectively suppress the boron penetration.The generation rate of the charge traps under a positive/negative FN stress and the slow state under the positive FN stress are significantly improved.The charges to breakdown of the nitrided thin gate SiO 2 increase 20%,compared with the conventional ones.
%K nitrided thin
%K gate SiO
%K 2
%K nitrogen ion implantation
%K boron penetration
%K FN stress<br>氮化薄SiO2栅
%K 氮离子注入
%K 硼穿透
%K FN应力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=82D4BDF199012CDA&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=DF92D298D3FF1E6E&sid=E348995F86F60FD3&eid=BEBF2238C7F1C1F1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0