%0 Journal Article
%T A Method of Verifying Simulated Steady Thermal Field of a Semiconductor Device<br>模拟器件稳态热场正确性的判断方法
%A ZHANG Hong-xin
%A <br>张鸿欣
%J 半导体学报
%D 2001
%I 
%X The 3-D thermal simulation of a realistic semiconductor device is diverse and error prone,so it is desired to be verified at the design stage.Besides the trivial morphology check,in which the shape of simulated thermal field must consist with the heat source of the device,a new method,average value check is proposed in this paper to judge the simulation results.If the simulation is correct,the average temperature of any horizontal cross section is equal to the predicted values of the chip,substrate and heat sink.And the average temperature can be predicted as follows:on condition that the average temperature drop over the layers,paralleling the bottoms of heat sink,equals the one predicted by the average theorem proposed;if the cross sections of the chip,substrate and heat sink are same sized,it can be obtained by directly from the average theorem;otherwise,it can be obtained using the average theorem together with the data synthesizing.To obtain a reliable result,it is necessary to simulate the dependence of the hottest spot temperature on an inaccurate parameter,if have,and then to determine the error of this temperature caused by the uncertainty of the parameter.This method is proved by simulating of GaAs MESFET and a Si BJT microwave device,with the results in good agreement with the experimental ones.
%K thermal simulation
%K reliability
%K semiconductor device<br>热分析
%K 可靠性
%K 半导体器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1FF2AA59D36BF79B&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=E158A972A605785F&sid=C4490A71BEB872FA&eid=A03A15CF5604A8B0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=13