%0 Journal Article
%T Self-Aligned Structure AlGaAs/GaAs HBT with High Power Density<br>高功率密度自对准结构AlGaAs/GaAs异质结双极晶体管
%A YAN Bei-ping
%A <br>严北平
%A 张鹤鸣
%A 戴显英
%J 半导体学报
%D 2001
%I 
%X A self aligned technology has been developed and applied to AlGaAs/GaAs heterojunction bipolar transistors using wet etch and sidewall techniques.The DC current gain is more than 20,the current gain cutoff frequency, f T,is more than 30GHz and the maximum oscillation frequency, f max ,is more than 50GHz.The CW power measurements show that output power of 100mW(output power density:6 67mW/mm)with power added efficiency(PAE)of 61 4% at 1dB gain compression has been achieved from a single finger HBT and that output power of 112mW(output power density:7 48mW/mm)with PAE of 67% can be achieved at the power saturated point.
%K self
%K aligned HBT
%K heterojunction
%K EEACC:2560J:0170E<br>自对准结构HBT
%K 异质结
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3FC26791108ADCE2&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=0B39A22176CE99FB&sid=002786F01A86D891&eid=1D01216AD76577EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=6&reference_num=9