%0 Journal Article
%T Interface Reaction of SiO2/Ta and Its Influence on Cu Diffusion<br>SiO_2/Ta界面反应及其对铜扩散的影响(英文)
%A Long Shibing
%A MA Jidong
%A Yu Guanghua
%A Zhao Hongchen
%A ZHU Fengwu
%A ZHANG Guohai
%A Xia Yang
%A <br>龙世兵
%A 马纪东
%A 于广华
%A 赵洪辰
%A 朱逢吾
%A 张国海
%A 夏洋
%J 半导体学报
%D 2002
%I 
%X Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.
%K copper interconnection in ULSI
%K diffusion barrier
%K interface reaction
%K X-ray photoelectron spectroscopy<br>ULSI铜互连
%K 扩散阻挡层
%K 界面反应
%K X射线光电子能谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E35C0A706778D319&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=F3090AE9B60B7ED1&sid=9A7C41A6BCE530C0&eid=208AC7DC28BD1EC6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17