%0 Journal Article
%T Breakdown Characteristics of Semi-Insulating GaAs Photoconductive Switch<br>半绝缘GaAs光电导开关的击穿特性
%A Shi Wei
%A Tian Liqiang
%A <br>施卫
%A 田立强
%J 半导体学报
%D 2004
%I 
%X A theoretical analysis for breakdown of photoconductive switch is proposed according to different breakdown character istics in the case of different optical trigger energies and bias voltage.A model of electron-trapping breakdown theories to analyze the breakdown characteristics of GaAs photoconductive switches is first proposed.The main points are that the bias electric field and the charges in the traps are the main reasons to generate hot electrons,and the number and the kinetic energy of hot electrons are determinative for damage degree of Ga-As bands,that relaxation degree of Ga-As network reflects the degree of breakdown.
%K GaAs
%K photoconductive switch
%K breakdown theories<br>砷化镓
%K 光电导开关
%K 击穿机理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=786BD7FC0AAD5F00&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=09F7C8D609E885AE&eid=A7379F6713A46835&journal_id=1674-4926&journal_name=半导体学报&referenced_num=11&reference_num=20