%0 Journal Article %T An Analytical Model for Threshold Voltage of Grooved-Gate MOSFET''''s
槽栅MOSFET''s的阈值电压解析模型 %A Zhang Xiaoju %A Ren Hongxia %A Feng Qian %A Hao Yue %A
张晓菊 %A 任红霞 %A 冯倩 %A 郝跃 %J 半导体学报 %D 2004 %I %X A simple analytical model of the threshold voltage is given.It reflects the variation of the threshold voltage with different geometry and technical parameters.The accuracy of the model is verified with the help of the simulated values and the result shows that the model is suitable for the grooved-gate MOSFET with small size. %K grooved-gate %K MOSFET %K threshold voltage %K analytical model
槽栅 %K MOSFET %K 阈值电压 %K 解析模型 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=735238CA53C7DF2B&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=E158A972A605785F&sid=5319469C819FCFF1&eid=A48DE16C07AAAB06&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=7