%0 Journal Article
%T Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT
%A Ji HaiTao
%A Zhang ShiLin
%A Guo WeiLian
%A Liang HuiLai
%A Mao LiuHong
%A <br>Qi Haitao
%A Zhang Shilin
%A Guo Weilian
%A Liang Huilai
%A and Mao Luhong
%J 半导体学报
%D 2005
%I 
%X A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.
%K HBT
%K ultra-thin base
%K device simulation
%K voltage-controlled NDR
%K PVCR<br>HBT
%K ultra-thin
%K base
%K device
%K simulation
%K voltage-controlled
%K NDR
%K PVCR
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A6D659E7EE63A3E9&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=5D311CA918CA9A03&sid=033F76C1E79F93E7&eid=D56713C22DA9FDE8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=9