%0 Journal Article %T GaAs_(1-x)P_x中N-等电子陷阱的研究 %A 李涵秋 %A 陆奋 %J 半导体学报 %D 1983 %I %X 本文用集团模型EHT方法计算GaAs_(1-x)Px中的N-等电子陷阱能级.计算表明,必须计入原子的激发态轨道才能使结果得到较为实质的改善. %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FFF49ADAEC83CAC182803BB975ADA0C8&yid=A7F20A391020FDEE&vid=E158A972A605785F&iid=0B39A22176CE99FB&sid=3E0812ED84A7B31D&eid=6235172E4DDBA109&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0