%0 Journal Article
%T 掺氢和掺氟无定形硅的EHMO研究
%A 蒋平
%J 半导体学报
%D 1983
%I 
%X 本文用EHMO方法计算了掺氢和掺氟无定形硅的电子态.结果表明掺氢和掺氟都能消除由悬挂键形成的能隙态,并且掺氟更有效;与已知的实验结果相符.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C2C95CD0DEAA42FC8833352E4475B8A5&yid=A7F20A391020FDEE&vid=E158A972A605785F&iid=0B39A22176CE99FB&sid=76B5E24D6EC46B4B&eid=A8DE7703CC9E390F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0