%0 Journal Article
%T Characteristic of Infrared Absorption Peaks at 708cm~(-1),742cm~(-1), 776cm~(-1)in NTD CZ-Si<br>NTD CZ-Si708cm~(-1)、742cm~(-1)、776cm~(-1)中照缺陷红外吸收带特性
%A He Xiukun/Tianjin Electronic Material Research InstituteWang Qin/Tianjin Electronic Material Research InstituteLi Guangping/Tianjin Electronic Material Research Institute
%A <br>何秀坤
%A 王琴
%A 李光平
%J 半导体学报
%D 1991
%I 
%X 本文报道了NTD CZ-Si 708cm~(-1)、742cm~(-1)、776cm~(-1)中照缺陷红外吸收带退火特性和温度特性的研究结果.三个带产生的退火温度为350℃-550℃,500℃退火效应最明显,峰强达到最大值;10-95K变温测量峰位频移为零.10-60K时,峰强随温度升高而平缓增加,60K时达到最大值.在60-95K温区,峰强随温度升高而迅速下降,至100K时已全部消失.
%K NTD CZ-Si
%K Defect
%K Infrared absorption band
%K Annealing characteristic
%K Temperature characteristic<br>硅
%K 红外吸收带
%K 缺陷
%K 中照
%K 退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B6270D68ACCF36F&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=9FFCC7AF50CAEBF7&eid=1D0FA33DA02ABACD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=1