%0 Journal Article
%T RTA Study of Si,As Dual-Implantation into GaAs<br>Si,As双注入GaAs的RTA研究
%A ZHU Dehua/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversityLI Guohui/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversityZHANG Tonghe/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversityWANG Yuqi/Institute of Low Energy Nuclear Physics
%A Beijing Normal UniversitySUN Guiru/General Institute of Nonferrous Metal
%A Beijing
%A <br>朱德华
%A 李国辉
%A 张通和
%A 王玉琦
%A 孙贵如
%J 半导体学报
%D 1990
%I 
%X 本文研究了Si注入GaAs的快速退火(RTA)特性。得出930—950℃退火5s为最佳退火条件。测量结果表明,当注入剂量大于10~(13)cm~(-2)时,电子浓度呈饱和现象。为提高电子浓度本文提出Si,As双注入GaAs的方法,研究了(60—80)keV,(5—10)×10~(14)Si/cm~2+(150—180)keV,(5—30)×10~(14)As/cm~2注入并经RTA后的电特性。结果表明,双注入后样品中电子浓度有明显提高,对80keV,10~(15)Si/cm~2+150keV,3×10~(15)As/cm~2来说,电子浓度大于10~(19)cm~(-3)。TEM观察表明,双注入样品的剩余缺陷密度大大低于单注入的情况。本文并对双注入补偿机理进行了讨论。
%K GaAs
%K Si+As dual-implantation
%K Rapid themal annealing<br>Si
%K As
%K 注入了GaAs
%K RTA
%K 快速退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4CDA20E196A0E1D1&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=B0EBA60720995721&eid=475189FCB44F11F6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=1