%0 Journal Article
%T Raman Research of Amorphous Semiconductor Modulated Structure<br>非晶半导体多层调制结构的喇曼研究
%A Chen Guangxu/Center of materials Analysis
%A Nanjing UniversityNanjingZhang Xingkui/Institute of Solids state
%A Nanjing University
%A NanjingChen Kunji/Institute of Solids state
%A Nanjing University
%A Nanjing
%A <br>程光煦
%A 张杏奎
%A 陈坤基
%J 半导体学报
%D 1988
%I 
%X Baman research of amorphous semiconductor modulated structure is introduced,whichgives a certain quantity of angle disorder and the method of determining the size of crystallitefrom the frequency shift of TO-like peak.An emphasis is placed on the frequency spectraof modulated structures and some clear and definite conclusions are drawn.
%K Raman spectra research
%K Amorphous semiconductors
%K Modulaled structure<br>喇曼谱研究
%K 非晶半导体调制结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9636FF88B513B5F2&yid=0702FE8EC3581E51&vid=9CF7A0430CBB2DFD&iid=38B194292C032A66&sid=4AD4BA66429F5627&eid=90612DF06FCE4D55&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=0