%0 Journal Article
%T GD类多晶硅薄膜的电导特性
%A 何宇亮
%A 邵达
%A 马晓娟
%J 半导体学报
%D 1985
%I 
%X 文中提出,在GD法中用提高r.f射频功率的办法能淀积出含氢的类多晶硅薄膜.由于氢原子的作用,填充晶粒间界中大量的缺陷态,使晶间势垒降低从而使电导率升高了三个数量级.这种多晶硅薄膜对研制多晶硅器件是有利的.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B1096BAAFCEA7504B9BCD06648EB1779&yid=74E41645C164CD61&vid=B31275AF3241DB2D&iid=E158A972A605785F&sid=5335AD3CFE6E14EA&eid=B941678158018439&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0