%0 Journal Article
%T 电子辐照消除CMOS电路自锁效应的探讨
%A 黄惠玲
%A 许寿祥
%A 邱兴镛
%A 张秀淼
%A 苏九令
%A 包宗明
%J 半导体学报
%D 1982
%I 
%X <正> CMOS电路中存在着pnpn寄生可控硅结构,见图1(a),它比实际可控硅的结构多两个分流电阻Rn和R_p,见图1(b)、(c).若寄生npn和pnp晶体管的电流增益分别为β_(npn)和β_(pnp),这时导通条件便由理想可控硅的β_(npn)·β_(pnp)=1变为β_(npn)·β_(pnp)=
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=718AF1CD520ECBFB1333A41B50B3D70D&yid=3F3D540C9B7906DE&vid=38B194292C032A66&iid=B31275AF3241DB2D&sid=4ECB3941871FD391&eid=B99A53AADE50D922&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0