%0 Journal Article
%T Quasi-Planar InGaAsP/InP Heterojunction Bipolar Transistor and Its Intergration with Optoelectronic Devices<br>InGaAsP/InP准平面异质结双极晶体管及其与光器件的集成
%A Li Weidan/
%A <br>李维旦
%A 富小妹
%A 潘慧珍
%J 半导体学报
%D 1989
%I 
%X The relationship between the structure parameters and the characteristics of InGaAsP/InPheterojunction bipolar transistors (HBTs) has been studied by means of computer aided analysismethod.Based on it,a quasi-planar double collection region structure for the HBT and thefabrication techniques for the structure have been put forward.The effects of material qualityon the characteristics of HBTs have been discussed.And moreover,an InGaAsP/InP OEIC bas-ed on such kind of HBT has been analysed and fabricated.
%K InGaAsP/InP
%K Heterojunction Bipolar Transistor
%K OEIC<br>InGaAsP／InP
%K 异质结
%K 晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=70D1F32B7A80554E&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=DABEF202280E7EF1&eid=4609832E4B5C797B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2