%0 Journal Article
%T Theoretical Study of the Pd-B Complex in Silicon<br>硅中Pd-B络合物性质的理论研究
%A Wu Ji''''an/Institute of SemiconductorsAcademia Sinica
%A Beijing Zhou Jie/Institute of SemiconductorsAcademia Sinica
%A Beijing Zhang Daren/Research Center for Eco-Environment Sciences
%A Academia Sinica
%A Beijing
%A <br>吴汲安
%A 周洁
%A 张大仁
%J 半导体学报
%D 1989
%I 
%X in this paper we presents the results for the electronic structure of the interstitial Pd-substitu-tional B complex in silicon.The self-consistent-field calculations were performed within the fra-mework of scattered-wave Xa cluster method. Compared with the electronic structure of theisolated interstitial Pd and the isolated substitutional B in silicon,we concluded that for thecomplex Pd-B in silicon no pair level was formed.The ionic model,which is currentlyaccepted to describe interstitial 3d transition metal-IIIA group shallow acceptor impurity pairis not suitable to deal with the system of Pd-B complex in silicon.
%K 硅
%K 深能级
%K 络合物
%K 电子结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F30701FE8A74CD7CA99A&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=B31275AF3241DB2D&sid=E57FE519484CFB70&eid=78976D931AD1540F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2