%0 Journal Article
%T Characteristics of ZrN/n-GaAs Schottky Barriers<br>ZrN/n-GaAs肖特基势垒特性研究
%A Zhang Lichun/Institute of Microelectronics
%A Peking UniversityGao Yuzhi/Institute of Microelectronics
%A Peking UniversityN W Cheung/Institute of Microelectronics
%A Peking University
%A <br>张利春
%A 高玉芝
%A N.W.Cheung
%J 半导体学报
%D 1989
%I 
%X 本文用RBS,AES和电特性测量等方法,研究了ZrN/n-GaAs肖特基势垒.结果表明ZrN/GaAs势垒有良好的电特性和高温稳定性.经850℃高温退火后,势垒高度为0.90eV,理想因子n=1.02.同时我们观察到,随着退火温度升高(从500℃升高到850℃),ZrN/GaAs势垒电特性有明显改进:肖特基势垒高度增大、二极管反向电流减小、二极管电容减小和反向击穿电压增大.以上特点表明,ZrN/GaAs是用于自对准高速GaAs集成电路的较为理想的栅材料.
%K ZrN
%K GaAs
%K Schottky barrier<br>氮化锆
%K 砷化镓
%K 肖特基势垒
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307F6197F4FD0F78B55&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=8575BEDA702C4B7C&eid=ED01F5AE50BE09C0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=1