%0 Journal Article
%T Punchthrough Characteristics of LDD MOSFET''''s<br>漏轻掺杂MOSFET的源漏穿通
%A Xie Liansheng/
%A <br>谢连生
%A 陈学良
%A 徐元森
%J 半导体学报
%D 1989
%I 
%X 测量和分析了1μm LDD MOSFET的穿通特性,与常规结构的MOSFET加以比较.结果表明,LDD结构能够有效地抑制DIBL效应、大幅度地提高短沟道MOSFET的源漏穿通电压.此外,还给出LDD MOSFET源漏穿通机制的定性解释.
%K LDD MOSFET
%K short-channel MOSFET
%K Punchthrough
%K DIBL effect<br>MOSFET
%K 源漏穿通
%K 掺杂
%K LDD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E8D6D505080EBD3A&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=0DEB7A8A66C33AAD&eid=F8035C8B7D8A4264&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1