%0 Journal Article
%T A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography
%A Kang Xiaohui
%A Li Zhigang
%A Liu Ming
%A Xie Changqing
%A Chen Baoqin
%A <br>Kang Xiaohui
%A Li Zhigang
%A Liu Ming
%A Xie Changqing
%A and Chen Baoqin
%J 半导体学报
%D 2005
%I 
%X A new method for determining proximity parameters α,β,and η in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions.
%K electron
%K beam lithography
%K proximity effect
%K electron-beam proximity correction<br>电子束光刻
%K 临近效应
%K 电子束临近效应校正
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=89ACAC86CE8DC6BE&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=38B194292C032A66&sid=366B1248A15658C5&eid=3389C664025A98F9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=8