%0 Journal Article
%T Hot Electron Tunneling Mechanism of Current Collapse in GaN HFET<br>GaN HFET沟道热电子隧穿电流崩塌模型
%A Xue Fangshi
%A <br>薛舫时
%J 半导体学报
%D 2005
%I 
%X Two electron transition processes between channel and surface states in GaN HFET:hot electron tunneling and surface to band edge transition are investigated.Based on the tunneling between channel hot electrons and surface states,a new microscope mechanism of current collapse is proposed.Various experimental behaviors of photoionization spectroscopy,DLTS,transient current, and current collapse are explained by this microscopic mechanism.The different current collapse behaviors are investigated for various heterostructures,from which the optimized design of GaN HFET without current collapse is discussed.
%K current collapse
%K transient current
%K hot electron tunneling
%K GaN HFET<br>电流崩塌
%K 瞬态电流
%K 热电子隧穿
%K GaN
%K HFET
%K HFET
%K 沟道热电子
%K 热电子隧穿
%K 电流崩塌
%K 微观模型
%K Collapse
%K Current
%K Mechanism
%K Tunneling
%K 优化设计
%K 器件
%K 特性
%K 异质结构
%K 实验现象
%K 瞬态电流
%K DLTS
%K 光离化
%K 解释
%K 隧穿过程
%K 激活能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=665B4E97BE01CC86&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&sid=FCB16C6DAE3686F1&eid=31F0F67D06CBAD76&journal_id=1674-4926&journal_name=半导体学报&referenced_num=8&reference_num=29