%0 Journal Article
%T Design and Fabrication of Monolithically Integrated InGaAs PIN-JFET Photoreceivers<br>单片集成InGaAs PIN-JFET光接收器的设计与研制
%A Zhang Yonggang/
%A <br>张永刚
%A 富小妹
%A 潘慧珍
%J 半导体学报
%D 1989
%I 
%X 本文报告了一种OEIC器件:单片集成InGaAs PIN-JFET光接收器的设计与研制结果.为解决光电器件与电子器件在集成上的兼容性,采用了在结构衬底上进行平面化外延的新工艺,达到了器件的准平面结构,并对器件的主要参数进行了计算,选取了较佳的载流子浓度.制成的单片集成器件中,PIN光探测器的量子效率在1.3μm处为57％,暗电流在-5V下小于100nA,JFET的跨导为34ms/mm,与计算植相符.对器件进行光接收功能测试获得了预期的结果.
%K Optoelectronic integrated circuit (OEIC)
%K InGaAs alloy semiconductor
%K Photodetector
%K Field effect transistor (FET)<br>OEIC
%K InGaAs
%K JFET
%K 光探测器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6C52DE9227303F3C&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=856C2E13D1000DB7&eid=04445C1D2BDA24EE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1