%0 Journal Article
%T Influence on Etch Rates by Magnetic Field in Reactive Ion Etching<br>磁场对反应离子刻蚀速率影响的研究
%A Jin Zhongyuan/Microelectronics Research
%A Developtment Centre
%A Chines Academy of SciencesHan Jieping/Microelectronics Research
%A Developtment Centre
%A Chines Academy of SciencesMa Junru/Microelectronics Research
%A Developtment Centre
%A Chines Academy of Sciences
%A <br>金钟元
%A 韩阶平
%A 马俊如
%J 半导体学报
%D 1989
%I 
%X SiO_2 etching characteristics have been investigated by use of our magnetron reactive ionetching experimental apparatus Under the condition of magnetron discharge the etch rate ofSiO_2 is increased by 6 to 10 times employing CHF_3 In the mean while,the plasma selfbias vol-tage is reduced to one half.
%K IC technology
%K RIE
%K magn etron<br>磁场
%K 反应离子刻蚀
%K 集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=071385CF5E266B60&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=A020552C37306588&eid=2922B27A3177030F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0