%0 Journal Article
%T Study on Characteristics of Gold Acceptor in Silicon by Dynamic Photovoltaic Effect at Low Temperatures<br>硅中金受主能级特性的低温动态光伏研究
%A Yan Yongmei/Xiamen University
%A <br>颜永美
%J 半导体学报
%D 1991
%I 
%X 本文采用统计方法,对40K下金过补偿的P型硅单晶的动态光伏问题进行处理.计算结果与实验符合很好,从而探讨了硅中金受主能级在光离化、载流子复合过程中的行为,进而估算了金受主能级在hv=0.63eV光照下的光离化截面σ_i=6×10~(18)cm~2,及其对自由空穴的俘获截面σ_p=4×10~(15)cm~2.
%K Silicon
%K Gold Acceptor
%K Dynamic photovoltaic effect
%K low temperatures
%K statistical method<br>硅
%K 金受主能级
%K 动态光伏
%K 统计法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ADC9DDCE6EB66DD6&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=B31275AF3241DB2D&eid=708DD6B15D2464E8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=3