%0 Journal Article
%T Absorption Spectra and Transverse Photocurrent Spectra of GaAs/AlGaAs Multiple Quantum Wells<br>GaAs/AlGaAs多量子阱结构的光吸收谱和横向光电流谱
%A TENG Da/Institute of Semiconductors
%A Academia Sinica
%A BeijingXU Zhongying/Institute of Semiconductors
%A Academia Sinica
%A BeijingZHUANG Weihua/Institute of Semiconductors
%A Academia Sinica
%A BeijingWANG Shouwu/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>滕达
%A 徐仲英
%A 庄蔚华
%A 王守武
%J 半导体学报
%D 1990
%I 
%X Transverse photocurrent spectra and absorption spectra of MBE GaAs/AlGaAs MQWshave been studied.The photocurrent spectra show various exciton peaks and an extrinsic absorptionfrom acceptor levels in the wells to the n=1 electron subband.From both allowed andforbidden transitions,two electron and five hole subbands are determined. Our data are inexcellent agreement with a square well calculation using Q_c=0.60, m_e=0.0665, m_h=0.45 andm-l=0.12. A comparison of absorption spectra with photoluminescence spectra has been made.
%K QW
%K Transverse photocurren
%K Photoabsorption<br>GaAs／AlGaAs
%K 量子阱
%K 光吸收谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8D942C21269A482F&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=C3BF5C58156BEDF0&eid=89F76E117E9BDB76&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4