%0 Journal Article %T In_(1-x)Ga_xAs_yP_(1-y)/InP DH化学腐蚀腔面激光器 %A 段树坤 %A 石忠诚 %A 李静然 %A 吕卉 %A 王丽明 %A 孙富荣 %J 半导体学报 %D 1983 %I %X 用两相液相外延法生长 In_(1-x)Ga_xAs_yP_(1-y)/InP DH外延片,以 AZ1350i胶模掩蔽,在(001)DH片上,用Br_2:HBr:H_2O=1:25:50作腐蚀剂,沿<110>方向刻槽,研制成两种发射波长为1.35μm In_(1-x)Ga_xAs_yP_(1-y)/InP化学腐蚀腔面激光器.单面化学腐蚀腔面激光器的阈电流密度与常规解理腔面器件相比,未见增高.而双面化学腐蚀腔面激光器则有较高的阈电流密度. %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7D9157F85E5C756C548B409DD9CDD00C&yid=A7F20A391020FDEE&vid=E158A972A605785F&iid=38B194292C032A66&sid=6490F0E20C4B41AD&eid=E39A3F4E3A67639B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0