%0 Journal Article
%T Photoluminescence and Photoreflectance of GaAs on (100) Si Grown by Molecular Beam Epitaxy<br>分子束外延GaAs/Si应变层的光致发光和光反射谱研究
%A Teng Da/Institute of Semiconductors
%A Academia Sinica Zhuang Weihua/Institute of Semiconductors
%A Academia Sinica Liang Jiben/Institute of Semiconductors
%A Academia Sinica Li Yuzhang/Institute of Semiconductors
%A Academia Sinica
%A <br>滕达
%A 庄蔚华
%A 梁基本
%A 李玉璋
%J 半导体学报
%D 1990
%I 
%X 研究了分子束外延GaAs/Si光致发光谱的激发强度和温度依赖关系。确定出2个本征发光峰,分别对应于导带至m_J=±3/2和m_J=±1/2价带的复合。这种价带的移动和分裂归因于由GaAs和Si的热膨胀系数不同所引起的GaAs层双轴张应力。还观测到4个非本征发光峰,分别为导带至m_J=±1/2碳受主态发光、可能与缺陷有关的发光以及可能由Mn和Cu受主杂质引起的发光。室温下将GaAs/Si和GaAs/GaAs材料的光反射谱进行比较,前者明显向低能移动约8meV,观测到3个特征谱结构,与光致发光结果相一致。
%K GaAs/Si
%K Photoluminescence
%K Photoreflectance<br>GaAs／Si
%K 光反射谱
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A8CA1B2EF7AE8523&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=F204392B3B11C3BD&eid=F3A3627BFEF439C1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0