%0 Journal Article
%T Orientation of Thin Crystal Layer with Zincblende Structure Using Raman Scattering Extrema Method<br>喇曼散射光极值法定闪锌矿结构薄层的晶向
%A Wu Huasheng/
%A <br>吴华生
%A 邬建根
%A 屈逢源
%J 半导体学报
%D 1990
%I 
%X The Raman Scattering Extrema Method proposed by the authors to determine the orientationof a thin layer crystal with diamond structure is extended to the zincblende structure. TheRaman scattering intensities of LO and TO phonons for a zincblende-stuctured thin layer asfunctions of both the orientation of this layer and the polarization direction of the incidentlight have been derived.The orientation of the layer is determined by means of the extremaof these functions For GaP wafers, the result obta(?)ned by using this method is compared withthat determined by the X-ray method.
%K Raman Scattering
%K zincblende structure
%K thin crystal layer
%K Orientation<br>锌矿
%K 晶体
%K 晶向
%K 喇曼散射
%K 光极值
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=427369751FE7CA05&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=DF92D298D3FF1E6E&sid=8566B4AE2A8832E3&eid=B7B25E832E7F23D8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2