%0 Journal Article
%T GaP(-1-1-1)-1×1表面的Ga3d化学位移
%A 邢益荣
%J 半导体学报
%D 1987
%I 
%X 单色的 Hellα(hv=40.8eV)光电子发射测量发现:在IBA的 GaP(III)-1×1表面上,最外层Ga原子的3d能级结合能比体内减小0.75±0.05eV.解释为表面原子的极化程度低于体内.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=130EDCBD10863142B75DEAD0B75AD9DC&yid=9C2DB0A0D5ABE6F8&vid=5D311CA918CA9A03&iid=38B194292C032A66&sid=407C905D8F0449C4&eid=F416A9924F23B020&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0