%0 Journal Article
%T In_(0.53)Ga_(0.47)As的液相外延生长
%A 王树堂
%A 潘荣浚
%A 曾靖
%J 半导体学报
%D 1984
%I 
%X 用液相外延的方法在(100)取向的InP衬底上生长了晶格匹配的In_(0.53)Ga_(0.47)s.采用普通的原材料,经过适当的处理工艺,已经获得室温载流子密度为(5-10)×10~(15)cm~(-3),电子迁移率高达9450cm~2/V·s的In_(0.53)Ga_(0.47)As外延层.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AF2E8D0CE549C432&yid=36250D1D6BDC99BD&vid=94C357A881DFC066&iid=0B39A22176CE99FB&sid=797D49279EA93BC4&eid=CEC789B3C68C3BB3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0