%0 Journal Article
%T Epitaxial Growth of 150mm Silicon Epi-Wafers for Advanced IC Applications<br>用于先进 CMOS电路的 150 mm硅外延片外延生长(英文)
%A WANG Qi
%A |yuan
%A CAI Tian
%A |hai
%A YU Yuan
%A |huan
%A LIN Lan
%A |ying
%A <br>王启元
%A 蔡田海
%A 郁元桓
%A 林兰英
%J 半导体学报
%D 2000
%I 
%X With the device feature's size miniaturization in very large scale integrated circuit and ultralarge scale integrated circuit towards the sub\|micron and beyond level, the next generation of IC device requires silicon wafers with more improved electrical characteristics and reliability as well as a high perfection of the wafer surface. Compared with the polished wafer with a relatively high density of crystal originated defects (e. g. COPs), silicon epi\|wafers can meet such high requirements. The current development of researches on the 150mm silicon epi\|wafers for advanced IC applications is described. The P/P\++ CMOS silicon epi\|wafers were fabricated on a PE2061 Epitaxial Reactor (made by Italian LPE Company). The material parameters of epi\|wafers, such as epi\|defects, uniformity of thickness and resistivity, transition width, and minority carrier generation lifetime for epi\|layer were characterized in detail. It is demonstrated that the 150mm silicon epi\|wafers on PE2061 can meet the stringent requirements for the advanced IC applications.
%K silicon
%K epitaxial growth<br>硅
%K 外延生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4C9DB5D3D9E56490&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=BA48F0B914ED890A&eid=389DA78D878702A9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=5