%0 Journal Article
%T Influence of Blue-Band Emission in GaN-Based Green Light Emitting Diode Materials on Device Performance<br>GaN基绿光LED材料蓝带发光对器件特性的影响
%A Shao Jiaping
%A Guo Wenping
%A Hu Hui
%A Hao Zhibiao
%A Sun Changzheng
%A Luo Yi
%A <br>邵嘉平
%A 郭文平
%A 胡卉
%A 郝智彪
%A 孙长征
%A 罗毅
%J 半导体学报
%D 2004
%I 
%X The influence of blue-band emission in GaN-based green light emitting diode(LED) materials on the electro-optical conversion efficiency of device is studied by photoluminescence(PL) spectra at room temperature and low temperature 10K.The blue-band emission characteristics of samples with different epitaxy conditions are carefully compared.The results show that the optical output power of device could be dramatically improved by the decrease or elimination of blue-band emission,which mainly originates from the crystal defects on the p-type layer of the LED-structure especially for the green LED materials with high indium contents on the MQW-active layer.
%K GaN
%K LED materials
%K blue-band emission<br>GaN
%K LED材料
%K 蓝带发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=91D0BC5A7EAC1BE4&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=708DD6B15D2464E8&sid=592CC3414B588215&eid=D56713C22DA9FDE8&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=12